Alloyed ?-(Al<i>_x</i>Ga_1?<i>x</i>)₂O₃ bulk Czochralski single ?-(Al_0.1Ga_0.9)₂O₃ and polycrystals ?-(Al_0.33Ga_0.66)₂O₃, ?-(Al_0.5Ga_0.5)₂O₃), and property trends

In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped B-Ga2O3. Further, growths 33% B-(Al0.33Ga0.67)2O3 and 50% B-(Al0.5Ga0.5)2O3 B-AlGaO3 produce polycrystalline single-phase material (B-AGO). All three compositions investigated by x-ray diffraction, Raman spectroscopy, optical absorption, 27Al nuclear magnetic resonance (NMR). By investigating phase B-AGO over a large range concentrations (10 50 %), broad trends lattice parameter, vibrational modes, bandgap, crystallographic site preference determined. parameters linear trend Al incorporation. According to NMR, aluminum incorporates on both sites B-Ga2O3, slight for octahedral (GaII) site, becomes more disordered increasing Al. Single were also characterized rocking curve, transmission electron microscopy, purity (glow discharge mass spectroscopy fluorescence), (200 nm 20 um wavelengths), resistivity. These measurements suggest that electrical compensation impurity acceptor doping is not likely explanation high resistivity, but rather shift hydrogen level from shallow donor deep due alloying. .. Cont. This article may be downloaded personal use only. Any other requires prior permission author AIP Publishing. appeared Journal Applied Physics 131 155702.